A 60-GHz fully-integrated Doherty power amplifier based on 0.13-μm CMOS process

Author

Wicks, Byron ; Skafidas, Efstratios ; Evans, Rob

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Melbourne, Melbourne, VIC

fYear

2008

fDate

June 17 2008-April 17 2008

Firstpage

69

Lastpage

72

Abstract

A sixty-gigahertz (60-GHz) Doherty power amplifier (PA) has been designed and implemented on 0.13 mum RF-CMOS for use in an integrated 60-GHz transceiver. The fully-integrated design implements the main and auxiliary amplifiers, matching networks, and input and output transmission line networks on-chip. The prototype operating from a 1.6-V supply exhibits an output referred P_1dB of 7.0 dB, a P_SAT of +7.8 dBm, with peak power gain of 13.5 dB, a 3-dB bandwidth of 6.7 GHz, and 3.0 % PAE. The die area is 1.8 mm². This amplifier achieves the highest reported figure of merit for power amplifiers of any published millimeter-wave PA on CMOS.

Keywords

CMOS analogue integrated circuits; field effect MIMIC; millimetre wave power amplifiers; transceivers; Doherty power amplifier; RF-CMOS; bandwidth 6.7 GHz; frequency 60 GHz; gain 13.5 dB; matching networks; on-chip transmission line networks; size 0.13 micron; voltage 1.6 V; Bandwidth; CMOS process; Gain; High power amplifiers; Impedance matching; Network-on-a-chip; Power amplifiers; Power transmission lines; Prototypes; Transceivers; CMOS millimeter wave integrated circuits; Doherty amplifier; millimeter wave amplifiers; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE

Conference_Location

Atlanta, GA

ISSN

1529-2517

Print_ISBN

978-1-4244-1808-4

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2008.4561388

Filename

4561388