A low phase noise LC-VCO with a high-Q inductor fabricated by wafer level package technology

Author

Ohashi, Kazuma ; Kobayashi, Yuka ; Ito, Hiroyuki ; Okada, Kenichi ; Hatakeyama, Hideki ; Aizawa, Takuya ; Ito, Tatsuya ; Yamauchi, Ryozo ; Masu, Kazuya

Author_Institution

Integrated Res. Inst., Tokyo Inst. of Technol., Yokohama

fYear

2008

fDate

June 17 2008-April 17 2008

Firstpage

123

Lastpage

126

Abstract

This paper presents a CMOS voltage controlled oscillator (VCO) with a high-Q inductor fabricated by using a commercial wafer-level-package (WLP) technology. A new topology suitable for CMOS VCOs with high-Q WLP inductors is proposed. Measured Q of a WLP inductor is 40 in differential mode at around 1.9 GHz. A phase noise is -134.4 dBc/Hz at a 1 MHz offset for 1.9 GHz carrier frequency, and a FoM is -193 dBc/Hz. The VCO with the WLP inductor improves a phase noise of 6.4 dB as compared to VCOs with conventional on-chip inductors.

Keywords

CMOS integrated circuits; UHF integrated circuits; UHF oscillators; inductors; network topology; phase noise; voltage-controlled oscillators; wafer level packaging; CMOS voltage controlled oscillator; LC-VCO; UHF; frequency 1.9 GHz; high-Q inductors; low phase noise; onchip inductors; wafer level package technology; 1f noise; CMOS technology; Frequency; Inductors; Packaging; Phase noise; Resins; Varactors; Voltage-controlled oscillators; Wafer scale integration; CMOS; LC-VCO; WLP; high-Q inductor; low phase noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE

Conference_Location

Atlanta, GA

ISSN

1529-2517

Print_ISBN

978-1-4244-1808-4

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2008.4561400

Filename

4561400