DocumentCode :
2081047
Title :
Theoretical and Experimental Investigation of Millimeter-Wave InP Gunn-Effect Oscillator
Author :
Ekzhanov, A.E. ; Kosov, A.S. ; Zotov, V.A.
Author_Institution :
Space Research Institute, 117810 Profsoyuznaya 84/32, Moscow, USSR.
Volume :
2
fYear :
1990
fDate :
9-13 Sept. 1990
Firstpage :
1782
Lastpage :
1786
Abstract :
A large-signal computer simulation of an InP millimeter-wave Gunn-effect oscillator has been developed. The results of simulation show that increasing active region doping level leads to substantial growth of efficiency. The maximal simulated efficiency for uniformly doped structure was found to be 7.5% at 110 GHz, 4.4% at 160 GHz, 2.1% at 200 GHz. The technology was also developed witch allow to make active structures with small (about 10 ¿m) diameter. The experimental oscillators efficiency was 2% at 110 GHz (fundamental mode) and 0.7% at 150 GHz (second harmonic) for 1.1 ¿m uniformly doped structure.
Keywords :
Anodes; Capacitance; Circuits; Computational modeling; Computer simulation; Doping; Electrons; Indium phosphide; Monte Carlo methods; Oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1990. 20th European
Conference_Location :
Budapest, Hungary
Type :
conf
DOI :
10.1109/EUMA.1990.336330
Filename :
4136267
Link To Document :
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