Title :
Process sensitivity analysis using design of experiments and full 2D TCAD simulations
Author_Institution :
GEC Plessey Semicond., Plymouth, UK
Abstract :
The use of Technology CAD (TCAD) and Design of Experiment (DOE) tools for process sensitivity analysis and optimisation is described. The use of novel DOE techniques and their suitability to assess process manufacturability is outlined. An example of how this methodology can be applied to a 0.5 μm CMOS process, using full 2D TCAD is discussed
Keywords :
CAD; CMOS integrated circuits; design of experiments; semiconductor process modelling; sensitivity analysis; 0.5 micron; 2D TCAD simulations; CMOS process; Technology CAD; design of experiments; optimisation; process manufacturability; process sensitivity analysis;
Conference_Titel :
Advanced MOS and Bi-Polar Devices, IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19950193
