DocumentCode
2081290
Title
Laser cooling in semiconductors: is it possible?
Author
Imangholi, B. ; Hasselbeck, M.P. ; Sheik-Bahae, M. ; Epstein, R.I. ; Kurtz, S.
Author_Institution
Dept. of Phys. & Astron., New Mexico Univ., Albuquerque, NM
fYear
2004
fDate
21-21 May 2004
Firstpage
198
Lastpage
200
Abstract
Achieving net laser cooling in semiconductors requires extremely low non-radiative recombination rates. We present photoluminescence data obtained with MOCVD GaAs/InGaP passivated heterostructures that show laser cooling of GaAs is feasible
Keywords
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser cooling; nonradiative transitions; passivation; photoluminescence; GaAs-InGaP; GaAs/InGaP heterostructures; MOCVD; laser cooling; nonradiative recombination rates; passivated heterostructures; photoluminescence; semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-778-4
Type
conf
Filename
1366710
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