Title :
Waveform Engineering beyond the Safe Operating Region: Fully Active Harmonic Load Pull Measurements under Pulsed Conditions
Author :
Casbon, M.A. ; Tasker, P.J. ; Benedikt, J.
Author_Institution :
Centre for High Freq. Eng. Sch. of Eng., Cardiff Univ., Cardiff, UK
Abstract :
It is often desirable to measure device characteristics under non-continuous operation, perhaps to better simulate actual operating conditions, to reduce the thermal loading or to investigate RF operation going beyond the CW safe operating region. In this paper a measurement solution is presented that allows for the concept of experimental RF waveform engineering to be undertaken under such conditions. The system is demonstrated by using it to investigate the feasibility of operating GaAs based HEMT technology under pulsed conditions in high efficiency modes that required high RF voltage swings that extend beyond their rated CW safe operating region.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; semiconductor device measurement; HEMT technology; RF waveform engineering; fully active harmonic load pull measurements; safe operating region; thermal loading; Current measurement; Harmonic analysis; Power amplifiers; Power generation; Pulse measurements; Radio frequency; Temperature measurement;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-61284-711-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2011.6062435