Title :
High Efficiency Ka-Band Power Amplifier MMIC Utilizing a High Voltage Dual Field Plate GaAs PHEMT Process
Author :
Campbell, Charles F. ; Dumka, Deep C. ; Kao, Ming-Yih ; Fanning, David M.
Author_Institution :
TriQuint Semicond., Richardson, TX, USA
Abstract :
The design and performance of a high efficiency Ka-band power amplifier MMIC utilizing a 0.15um high voltage GaAs PHEMT process (HV15) is presented. Experimental continuous wave (CW) in-fixture results for the power amplifier MMIC demonstrate up to 5W of saturated output power and 30% associated power added efficiency at 35GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium arsenide; CW; GaAs; continuous wave; frequency 35 GHz; high efficiency Ka-band power amplifier MMIC; high voltage dual field plate PHEMT process; size 0.15 mum; Fixtures; Gallium arsenide; MMICs; PHEMTs; Power amplifiers; Power generation;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-61284-711-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2011.6062436
