Early resistance change and stress/electromigration evolution in near-bamboo interconnects

Author

Petrescu, V. ; Mouthaan, A.J. ; Dima, G. ; Govoreanu, B. ; Mitrea, O. ; Profirescu, M.

Author_Institution

MESA Res. Inst., Twente Univ., Enschede, Netherlands

Volume

2

fYear

1997

fDate

7-11 Oct 1997

Firstpage

311

Abstract

A complete description for early resistance change and mechanical stress evolution in near-bamboo interconnects, related to the electromigration, is given in this paper. The proposed model, for the first time, combines the stress/vacancy concentration evolution with the early resistance change of the Al line with a near-bamboo microstructure, which has been proven to be a fast technique for prediction of the MTF of a line compared to the conventional (accelerated) stress

Keywords

aluminium; crystal microstructure; electrical resistivity; electromigration; integrated circuit interconnections; integrated circuit metallisation; internal stresses; vacancies (crystal); Al; Al line; MTF; early resistance change; mechanical stress evolution; near-bamboo interconnects; near-bamboo microstructure; resistance; stress/electromigration evolution; stress/vacancy concentration evolution; Artificial intelligence; Atomic layer deposition; Atomic measurements; Electromigration; Grain boundaries; Laboratories; Lattices; Microstructure; Predictive models; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International

Conference_Location

Sinaia

Print_ISBN

0-7803-3804-9

Type

conf

DOI

10.1109/SMICND.1997.651013

Filename

651013