Title :
Capacitance Performance of Single Material Double Workfunction Gate(SMDWG) MOSFET
Author :
Li, Junsheng ; Dai, Yuehua ; Chen, Junning ; Ke, Daoming
Author_Institution :
Inst. of Electron. Sci. & Technol., Anhui Univ., Hefei, China
Abstract :
In this paper, Single Material Double Workfuntion Gate (SMDWG) MOSFET was proposed, which is compatible with CMOS technology and has the performance as Dual Material Gate (DMG) MOSFET. The capacitance performance of SMDWG MOSFET is simulated by MEDICI. Comparison with p+ gate and n+ gate MOSFET are made, and the differences are discussed in detail. The SMDWG MOSFET device operating at subthreshold state is suggested to be used in analog ICs.
Keywords :
CMOS analogue integrated circuits; MOSFET; capacitance; semiconductor process modelling; CMOS technology; MEDICI simulation; analog IC; capacitance; complementary metal-oxide-semiconductor; integrated circuits; metal-oxide-semiconductor field effect transistor; single material double workfunction gate MOSFET; subthreshold state; CMOS technology; Capacitance; Cities and towns; Doping; Electric potential; Impurities; MOSFET circuits; Materials science and technology; Transconductance; Voltage;
Conference_Titel :
Wireless Communications, Networking and Mobile Computing, 2009. WiCom '09. 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3692-7
Electronic_ISBN :
978-1-4244-3693-4
DOI :
10.1109/WICOM.2009.5301351
