Capacitance Performance of Single Material Double Workfunction Gate(SMDWG) MOSFET

Author

Li, Junsheng ; Dai, Yuehua ; Chen, Junning ; Ke, Daoming

Author_Institution

Inst. of Electron. Sci. & Technol., Anhui Univ., Hefei, China

fYear

2009

fDate

24-26 Sept. 2009

Firstpage

1

Lastpage

4

Abstract

In this paper, Single Material Double Workfuntion Gate (SMDWG) MOSFET was proposed, which is compatible with CMOS technology and has the performance as Dual Material Gate (DMG) MOSFET. The capacitance performance of SMDWG MOSFET is simulated by MEDICI. Comparison with p+ gate and n+ gate MOSFET are made, and the differences are discussed in detail. The SMDWG MOSFET device operating at subthreshold state is suggested to be used in analog ICs.

Keywords

CMOS analogue integrated circuits; MOSFET; capacitance; semiconductor process modelling; CMOS technology; MEDICI simulation; analog IC; capacitance; complementary metal-oxide-semiconductor; integrated circuits; metal-oxide-semiconductor field effect transistor; single material double workfunction gate MOSFET; subthreshold state; CMOS technology; Capacitance; Cities and towns; Doping; Electric potential; Impurities; MOSFET circuits; Materials science and technology; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Communications, Networking and Mobile Computing, 2009. WiCom '09. 5th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-3692-7

Electronic_ISBN

978-1-4244-3693-4

Type

conf

DOI

10.1109/WICOM.2009.5301351

Filename

5301351