• DocumentCode
    2081626
  • Title

    A W-band SiGe 1.5V LNA for imaging applications

  • Author

    May, Jason W. ; Rebeiz, Gabriel M.

  • Author_Institution
    Univ. of California, San Diego, CA
  • fYear
    2008
  • fDate
    June 17 2008-April 17 2008
  • Firstpage
    241
  • Lastpage
    244
  • Abstract
    This paper presents a 4-stage SiGe W-band amplifier for imaging applications designed in a 200 GHz ft SiGe BiCMOS process (IBM 8HP). The amplifier exhibits a gain of 19 dB at 85-89 GHz, a 3-dB bandwidth of 17 GHz, a NF of 8-10 dB over the measurement band, and consumes only 25 mW of DC power. The amplifier is very small (0.1 mm2 without pads), making it ideal for 8 or 16-element imaging arrays on a single chip. To our knowledge, this is the first demonstration of a high-gain, high-bandwidth W-band amplifier using SiGe technology.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; field effect MIMIC; image sensors; low noise amplifiers; millimetre wave amplifiers; BiCMOS; LNA; bandwidth 17 GHz; frequency 85 GHz to 89 GHz; imaging; power 25 mW; voltage 1.5 V; BiCMOS integrated circuits; Broadband amplifiers; Detectors; Gain; Germanium silicon alloys; Impedance; MIM capacitors; Noise figure; Schottky diodes; Silicon germanium; BiCMOS; IBM 8HP; LNA; SiGe; W-band;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
  • Conference_Location
    Atlanta, GA
  • ISSN
    1529-2517
  • Print_ISBN
    978-1-4244-1808-4
  • Electronic_ISBN
    1529-2517
  • Type

    conf

  • DOI
    10.1109/RFIC.2008.4561427
  • Filename
    4561427
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2081626