Title :
A 300 GHz Divide-by-2 ILFD Using Frequency Boosting Technique
Author :
Pin-Hao Feng ; Shen-Iuan Liu
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A 300 GHz divide-by-2 ILFD is fabricated in 40 nm CMOS technology. This ILFD adopts π-type LC networks with a negative coupling technique to enhance the oscillation frequency. The oscillation frequency and the locking range of the proposed ILFD are analyzed. The measured locking range is 297.08-306.64 GHz. The ILFD consumes 9.18 mW under a standard supply of 0.9 V excluding output buffers.
Keywords :
CMOS integrated circuits; LC circuits; field effect MIMIC; frequency dividers; π-type LC networks; CMOS technology; divide-by-2 ILFD; frequency 297.08 GHz to 306.64 GHz; frequency boosting technique; integer locked frequency dividers; locking range; negative coupling technique; oscillation frequency; power 9.18 mW; size 40 nm; voltage 0.9 V; CMOS integrated circuits; Couplings; Frequency conversion; Frequency measurement; Inductors; Oscillators; Transistors; $pi$-type LC-tank; Injection-locked frequency divider (ILFD); sub-THz;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2013.2280643
