0.15uM Y-Gate pHEMT Process Using Deep-UV Phase-Shift Lithography

Author

Wang, Jerry G. ; Stanback, John ; Fujii, Kohei

Author_Institution

Avago Technol. Inc., Fort Collins, CO, USA

fYear

2011

fDate

16-19 Oct. 2011

Firstpage

1

Lastpage

4

Abstract

An AlGaAs/InGaAs pHEMT process employing Deep-UV Phase-Shift lithography to create 0.15uM Y-shape gates has been developed and released to manufacturing. The gate formation process has high throughput and low cost compared to E-beam lithography and excellent process control has been achieved. Typical Fet characteristics are: peak fT=86Ghz, Vp=-1.0V, Gmmax=520mS/mm, Imax=575mA/mm, and BVdg=14 volts. A 9-section traveling wave amplifier (TWA) with 10dB gain up to 88 Ghz has been manufactured in this process.

Keywords

III-V semiconductors; aluminium compounds; electron beam lithography; gallium arsenide; high electron mobility transistors; indium compounds; travelling wave amplifiers; ultraviolet lithography; 9-section traveling wave amplifier; AlGaAs-InGaAs; Y-gate pHEMT process; deep-UV phase-shift lithography; electron beam lithography; frequency 88 GHz; gain 10 dB; gate formation process; process control; size 0.15 mum; voltage 14 V; Gallium arsenide; Lithography; Logic gates; Metals; PHEMTs; Performance evaluation; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE

Conference_Location

Waikoloa, HI

ISSN

1550-8781

Print_ISBN

978-1-61284-711-5

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2011.6062444

Filename

6062444