DocumentCode :
2081747
Title :
Statistical variations in VCO phase noise due to upconverted MOSFET 1/f noise
Author :
Erturk, M. ; Xia, T. ; Wolf, R.L. ; Scagnelli, D.P. ; Clark, W.F.
Author_Institution :
Sch. of Eng., Univ. of Vermont, Burlington, VT
fYear :
2008
fDate :
June 17 2008-April 17 2008
Firstpage :
255
Lastpage :
258
Abstract :
Statistical phase noise analysis and measurements are presented for a population of RF CMOS VCOs. The measured mean values for phase noise at 1 kHz and 1 MHz offset frequencies are -46 dBc/Hz and -130 dBc/Hz respectively. However a large variation from the mean (+/-3 dBc/Hz) is observed for the close-in phase noise. This variation is attributed to the upconverted transistor 1/f noise and its statistical nature. Phase noise simulations employing two versions of models with 1/f noise statistics have been run and compared to measurement. The improved noise model which accounts for the bias dependence of noise variability shows excellent agreement with measured data, while the early model with no bias dependence overpredicts the phase noise variations.
Keywords :
1/f noise; CMOS integrated circuits; MOSFET; phase noise; radiofrequency integrated circuits; statistical analysis; voltage-controlled oscillators; RF CMOS VCO; VCO phase noise; statistical phase noise analysis; statistical variations; upconverted MOSFET 1/f noise; Circuit noise; Integrated circuit noise; MOSFET circuits; Noise measurement; Phase measurement; Phase noise; Radio frequency; Radiofrequency integrated circuits; Statistics; Voltage-controlled oscillators; 1/f noise; compact modeling; jitter; phase noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location :
Atlanta, GA
ISSN :
1529-2517
Print_ISBN :
978-1-4244-1808-4
Electronic_ISBN :
1529-2517
Type :
conf
DOI :
10.1109/RFIC.2008.4561430
Filename :
4561430
Link To Document :
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