Title :
Near-Junction Thermal Management for Wide Bandgap Devices
Author :
Bar-Cohen, Avram ; Albrecht, John D. ; Maurer, Joseph J.
Author_Institution :
Defense Adv. Res. Projects Agency, Arlington, VA, USA
Abstract :
Near-junction thermal management is critical to achieving the promise of electronic and photonic devices using wide bandgap materials. In such devices, including GaN HEMTs in PAs, the thermal resistance associated with the "near-junction" region dominates the heat removal path and is often as large as the thermal resistance of all the other elements in the resistance chain. As part of DARPA\´s portfolio in Thermal Management Technologies (TMT), efforts are underway to develop transformative, paradigm-changing cooling techniques. This paper will briefly review the thermal management needs of WBG devices and DARPA\´s Thermal Management Technologies portfolio, with emphasis on the goals and status of these efforts relative to the current State-of-the-Art. Attention will then turn to promising options in near-junction cooling and the challenges inherent in realizing their potential for WBG device thermal management.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; power amplifiers; thermal management (packaging); thermal resistance; wide band gap semiconductors; DARPA TMT porfolio; DARPA thermal management technology portfolio; GaN; HEMT; TMT; WBG device thermal management; electronic devices; high electron mobility transistors; near-junction region; near-junction thermal management technology; paradigm-changing cooling techniques; photonic devices; power amplifiers; thermal resistance; wide bandgap devices; Conductivity; Diamond-like carbon; Gallium nitride; Substrates; Thermal conductivity; Thermal resistance;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-61284-711-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2011.6062454