DocumentCode
2082083
Title
Automotive Applications of GaN Power Devices
Author
Kachi, Tetsu ; Kanechika, Masakazu ; Uesugi, Tsutomu
Author_Institution
Toyota Central R&D Labs., Inc., Nagakute, Japan
fYear
2011
fDate
16-19 Oct. 2011
Firstpage
1
Lastpage
3
Abstract
Many power switching devices are used in a hybrid vehicle (HV) and an electric vehicle (EV). The power electronics in the HV/EV system is reviewed. For future development of the HV/EV system, higher performances of the power devices than Si limit, for example, low on-resistance, high operation temperature, are strongly required. GaN power devices are promising candidate for the requirements. Developing GaN power devices are lateral structure and vertical structure. Recent progress of the GaN power devices are also reviewed.
Keywords
III-V semiconductors; automotive electronics; gallium compounds; hybrid electric vehicles; power electronics; power semiconductor switches; wide band gap semiconductors; GaN; electric vehicle; hybrid vehicle; power electronics; power switching devices; Gallium nitride; Inverters; Logic gates; Performance evaluation; Silicon; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE
Conference_Location
Waikoloa, HI
ISSN
1550-8781
Print_ISBN
978-1-61284-711-5
Electronic_ISBN
1550-8781
Type
conf
DOI
10.1109/CSICS.2011.6062459
Filename
6062459
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