• DocumentCode
    2082083
  • Title

    Automotive Applications of GaN Power Devices

  • Author

    Kachi, Tetsu ; Kanechika, Masakazu ; Uesugi, Tsutomu

  • Author_Institution
    Toyota Central R&D Labs., Inc., Nagakute, Japan
  • fYear
    2011
  • fDate
    16-19 Oct. 2011
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Many power switching devices are used in a hybrid vehicle (HV) and an electric vehicle (EV). The power electronics in the HV/EV system is reviewed. For future development of the HV/EV system, higher performances of the power devices than Si limit, for example, low on-resistance, high operation temperature, are strongly required. GaN power devices are promising candidate for the requirements. Developing GaN power devices are lateral structure and vertical structure. Recent progress of the GaN power devices are also reviewed.
  • Keywords
    III-V semiconductors; automotive electronics; gallium compounds; hybrid electric vehicles; power electronics; power semiconductor switches; wide band gap semiconductors; GaN; electric vehicle; hybrid vehicle; power electronics; power switching devices; Gallium nitride; Inverters; Logic gates; Performance evaluation; Silicon; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE
  • Conference_Location
    Waikoloa, HI
  • ISSN
    1550-8781
  • Print_ISBN
    978-1-61284-711-5
  • Electronic_ISBN
    1550-8781
  • Type

    conf

  • DOI
    10.1109/CSICS.2011.6062459
  • Filename
    6062459