Title :
Radiation effects on advanced bipolar and MOS devices
Author_Institution :
Telerobotic Syst., AEA Technol., Harwell, UK
Abstract :
This paper describes the effects of gamma radiation on modern bipolar and MOS semiconductors, as experienced in typical nuclear power industry applications. The environmental conditions under which components and equipment have to operate are reviewed and the influence of these on microelectronic devices is considered. Special emphasis is placed upon the recent generation of radiation tolerant processes
Keywords :
MIS devices; gamma-ray effects; radiation hardening (electronics); semiconductor devices; MOS devices; bipolar devices; environmental conditions; gamma radiation; microelectronic devices; nuclear power industry; radiation tolerant processes; semiconductors;
Conference_Titel :
Advanced MOS and Bi-Polar Devices, IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19950183
