A stage-bypass SOI-CMOS switch for multi-mode multi-band applications

Author

Scuderi, Antonino ; Presti, Calogero D. ; Carrara, Francesco ; Rauber, Bruno ; Palmisano, Giuseppe

Author_Institution

STMicroelectronics, Catania

fYear

2008

fDate

June 17 2008-April 17 2008

Firstpage

325

Lastpage

328

Abstract

A double-pole double-throw SOI CMOS switch is presented, which can be exploited to bypass a power stage in a radio transmitter with the aim of improving efficiency in applications requiring transmit power control. The switch is designed through transistors stacking. It is able to manage up to a 35 dBm input power with less than 0.35 dB insertion loss from 500 MHz through 3 GHz. A series-shunt topology allows a better than 40 dB isolation to be obtained in high-power mode. Wide bandwidth and high linearity make the switch suitable for multi-standard front end.

Keywords

CMOS integrated circuits; microwave switches; radio transmitters; silicon-on-insulator; double-pole double-throw switch; frequency 500 MHz to 3 GHz; multistandard front end; power control; radio transmitter; series-shunt topology; stage-bypass SOI-CMOS switch; Bandwidth; CMOS technology; Isolation technology; Linearity; Power amplifiers; Propagation losses; Radio frequency; Radio transmitters; Silicon on insulator technology; Switches; CMOS; DPDT; SOI; SPDT; insertion loss; isolation; linearity; multi-band; multi-mode; switch; transmit power control;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE

Conference_Location

Atlanta, GA

ISSN

1529-2517

Print_ISBN

978-1-4244-1808-4

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2008.4561446

Filename

4561446