A Q-Band Amplifier Implemented with Stacked 45-nm CMOS FETs

Author

Pornpromlikit, Sataporn ; Dabag, Hayg-Taniel ; Hanafi, Bassel ; Kim, Joohwa ; Larson, Lawrence E. ; Buckwalter, James F. ; Asbeck, Peter M.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, CA, USA

fYear

2011

fDate

16-19 Oct. 2011

Firstpage

1

Lastpage

4

Abstract

A stacked FET, single-stage 45-GHz (Q-band) CMOS power amplifier (PA) is presented. The design stacked three FETs to avoid breakdown while allowing a high supply voltage. The IC was implemented in a 45-nm CMOS SOI process. The saturated output power exceeds 18 dBm from a 4-V supply. Integrated shielded coplanar waveguide (CPW) transmission lines as well as metal finger capacitors were used for input and output matching. The amplifier occupies an area of 450×500 im² including pads, while achieving a maximum power-added-efficiency (PAE) above 20%.

Keywords

CMOS analogue integrated circuits; coplanar waveguides; field effect analogue integrated circuits; field effect transistors; power amplifiers; CMOS power amplifier; Q-band amplifier; frequency 45 GHz; integrated shielded coplanar waveguide transmission lines; metal finger capacitors; power-added-efficiency; saturated output power; size 45 nm; stacked CMOS FET; voltage 4 V; CMOS integrated circuits; Capacitance; Capacitors; FETs; Gain; Logic gates;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE

Conference_Location

Waikoloa, HI

ISSN

1550-8781

Print_ISBN

978-1-61284-711-5

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2011.6062465

Filename

6062465