SiGeC and InP HBT Compact Modeling for mm-Wave and THz Applications

Author

Schroter, M. ; Pawlak, A. ; Sakalas, P. ; Krause, J. ; Nardmann, T.

Author_Institution

Dept. of Electron Devices & Integrated Circuits, Tech. Univ. Dresden, Dresden, Germany

fYear

2011

fDate

16-19 Oct. 2011

Firstpage

1

Lastpage

4

Abstract

An overview on compact transistor modeling for mm-wave HBT technologies is provided. Using HICUM as a vehicle, a comparison to experimental DC, AC and large-signal data is performed. Selected examples are shown for advanced SiGeC and InP HBTs with operating frequencies (f_T, f_max) of (300, 500) GHz and (350, 450) GHz, respectively. Good agreement between model and measurements is obtained for all characteristics.

Keywords

III-V semiconductors; germanium compounds; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; semiconductor device models; silicon compounds; submillimetre wave transistors; HBT compact modeling; HICUM; InP; SiGeC; THz applications; compact transistor modeling; frequency 300 GHz; frequency 350 GHz; frequency 450 GHz; frequency 500 GHz; large-signal data; mm-wave HBT technologies; Computational modeling; Geometry; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit modeling; Parameter extraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE

Conference_Location

Waikoloa, HI

ISSN

1550-8781

Print_ISBN

978-1-61284-711-5

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2011.6062466

Filename

6062466