A high performance 2-GHz direct-conversion front end with single-ended RF input in 0.13 um CMOS

Author

Feng, Yiping ; Takemura, Gaku ; Kawaguchi, Shunji ; Kinget, Peter

Author_Institution

Columbia Univ., New York, NY

fYear

2008

fDate

June 17 2008-April 17 2008

Firstpage

339

Lastpage

342

Abstract

This paper describes a 2.1-GHz CMOS front-end with a single-ended low noise amplifier (LNA) and a double balanced, current-driven passive mixer. The LNA features an on-chip transformer load to perform single-ended to differential conversion. Implemented in a 0.13 um CMOS process, it achieves 30 dB conversion gain, a low noise figure of 3.1 dB, a 40 kHz 1/f noise corner, an in-band IIP3 of -12 dBm and IIP2 better than 39 dBm, while consuming only 12 mW from a 1.5 V power supply.

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; low noise amplifiers; CMOS front-end; LNA; current-driven passive mixer; direct-conversion front end; double balanced mixer; frequency 2 GHz; frequency 2.1 GHz; gain 30 dB; noise figure 3.1 dB; on-chip transformer load; power 12 mW; single-ended RF input; single-ended low noise amplifier; size 0.13 mum; voltage 1.5 V; Capacitors; Filters; Impedance matching; Inductors; Linearity; Noise figure; Radio frequency; Radiofrequency amplifiers; Semiconductor device noise; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE

Conference_Location

Atlanta, GA

ISSN

1529-2517

Print_ISBN

978-1-4244-1808-4

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2008.4561449

Filename

4561449