Title :
Pervasive Modeling in InP HBT Technology Development
Author :
Li, James Chingwei ; Hussain, Tahir ; Hitko, Donald A. ; Sokolich, Marko
Author_Institution :
Microelectron. Lab., HRL Labs. LLC, Malibu, CA, USA
Abstract :
With InP HBT technologies rapidly scaling into the deep submicron regime and the rise of new heterogeneously integrated technologies, the ability to model InP HBTs from device concept to device development and on through to IC production has grown significantly. This work highlights the key modeling challenges for InP HBTs and highlights the critical role modeling plays in the technology development cycle.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor device models; HBT technology development; IC production; InP; device concept; device development; pervasive modeling; Computational modeling; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit modeling; Semiconductor device modeling; Solid modeling;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-61284-711-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2011.6062467
