• DocumentCode
    2082318
  • Title

    Insulated-Gate Integrated III-Nitride RF Switches

  • Author

    Gaska, R. ; Yang, J. ; Billingsley, D. ; Khan, B. ; Simin, G. ; Wong, H.Y. ; Braga, N. ; Hu, X. ; Deng, J. ; Shur, M. ; Mickevicius, R.

  • Author_Institution
    SET, Inc., Columbia, SC, USA
  • fYear
    2011
  • fDate
    16-19 Oct. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Monolithically integrated microwave switches based on insulated gate transistors benefit from extremely small leakage currents crucially important for large-periphery devices. Composite fast/slow gate design and nonlinearity compensation technique allow the insulated gate switches to achieving superior performance compared to existing RF switch types.
  • Keywords
    MMIC; MOSFET; high electron mobility transistors; leakage currents; microwave switches; insulated gate RF switches; insulated gate transistors; leakage currents; monolithically integrated microwave switches; nonlinearity compensation technique; Gallium nitride; HEMTs; Insertion loss; Logic gates; MODFETs; MOSHFETs; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE
  • Conference_Location
    Waikoloa, HI
  • ISSN
    1550-8781
  • Print_ISBN
    978-1-61284-711-5
  • Electronic_ISBN
    1550-8781
  • Type

    conf

  • DOI
    10.1109/CSICS.2011.6062470
  • Filename
    6062470
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2082318