• DocumentCode
    2082406
  • Title

    A high-linearity, LC-Tuned, 24-GHz T/R switch in 90-nm CMOS

  • Author

    Park, Piljae ; Shin, Dong Hun ; Pekarik, John J. ; Rodwell, Mark ; Yue, C. Patrick

  • Author_Institution
    High-Speed Silicon Lab., Univ. of California, Santa Barbara, CA
  • fYear
    2008
  • fDate
    June 17 2008-April 17 2008
  • Firstpage
    369
  • Lastpage
    372
  • Abstract
    This paper presents an LC-tuned, 24-GHz single-pole double-throw (SPDT) transmit/receive (T/R) switch implemented in 90-nm CMOS. The design focuses on the techniques to increase the power handling capability in the transmit (Tx) mode under 1.2-V operation. The switch achieves a measured P-1dB of 28.7 dBm, which represents the highest linearity, reported to date, for CMOS millimeter-wave T/R switches. The transmit and receive (Rx) branches employ different switch topologies to minimize the power leakage into the Rx path during Tx mode, and hence improve the linearity. To accommodate large signal swing, AC floating bias is applied using large bias resistors to all terminals of the switch devices. Triple-well devices are utilized to effectively float the substrate terminals. The switch uses a single 1.2-V digital control signal for T/R mode selection and for source/drain bias. The measured insertion loss is 3.5 dB and return loss is better than -10 dB at 24 GHz.
  • Keywords
    CMOS integrated circuits; RLC circuits; circuit tuning; microwave switches; millimetre wave circuits; AC floating bias; CMOS; frequency 24 GHz; insertion loss; power leakage; return loss; single-pole double-throw transmit-receive switch; substrate terminals; voltage 1.2 V; Digital control; Insertion loss; Linearity; Millimeter wave measurements; Millimeter wave technology; Resistors; Roentgenium; Switches; Topology; Virtual colonoscopy; 1-dB compression point; CMOS transmit/receive (T/R) switch; floating substrate; triple-well;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
  • Conference_Location
    Atlanta, GA
  • ISSN
    1529-2517
  • Print_ISBN
    978-1-4244-1808-4
  • Electronic_ISBN
    1529-2517
  • Type

    conf

  • DOI
    10.1109/RFIC.2008.4561456
  • Filename
    4561456