Title :
A 25 GHz 3.3 dB NF low noise amplifier based upon slow wave transmission lines and the 0.18 μm CMOS technology
Author :
Sayag, A. ; Levin, S. ; Regev, D. ; Zfira, D. ; Shapira, S. ; Goren, D. ; Ritter, D.
Author_Institution :
Dept. of Electr. Eng., Technion, Haifa
fDate :
June 17 2008-April 17 2008
Abstract :
A 25 GHz low noise amplifier using standard 0.18 mum digital CMOS technology is presented. Matching networks were based upon slow wave transmissions lines. Peak gain of 12.8 dB at 24 GHz and in-band minimum noise figure less than 4 dB were obtained at a power consumption of 8 mW. These record results demonstrate the usefulness of the slow wave transmission line approach. A compact model of slow wave transmission lines is briefly described as well.
Keywords :
CMOS digital integrated circuits; MMIC amplifiers; field effect MMIC; low noise amplifiers; slow wave structures; digital CMOS technology; frequency 24 GHz; frequency 25 GHz; low noise amplifier; power 8 mW; size 0.18 micron; slow wave transmission line; CMOS technology; Coplanar waveguides; Low-noise amplifiers; Noise measurement; Noise shaping; Power transmission lines; Semiconductor device modeling; Semiconductor device noise; Silicon; Transmission lines; CMOS; RLCG; k-band; low noise amplifier (LNA); slow wave transmission line;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1808-4
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2008.4561457
