DocumentCode
2082507
Title
VLSI implementation of cross-coupled MOS resistor circuits
Author
Ran, Phuoc T. ; Wilamowski, Bogdan M.
Author_Institution
Coll. of Eng., Univ. of Idaho Boise Center, ID, USA
Volume
3
fYear
2001
fDate
2001
Firstpage
1886
Abstract
This paper presents the cross-coupled MOS resistor circuits. The circuits consist of two internal pairs of NMOS and PMOS transistors, and their critical, width and length parameters regulate the drain current, transconductance, and output drain resistance. Consequently it determines the output resistance of the circuits. The cross-coupled MOS resistor circuits can be used in multiplication circuits and internal filter designs
Keywords
MIS devices; MOS integrated circuits; VLSI; resistors; NMOS transistors; PMOS transistors; VLSI implementation; critical width; cross-coupled MOS resistor circuits; drain current regulation; internal filter designs; length parameters; multiplication circuits; output drain resistance regulation; transconductance regulation; Circuit simulation; Circuit synthesis; MOS devices; MOSFETs; Resistors; SPICE; Transconductance; Variable structure systems; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics Society, 2001. IECON '01. The 27th Annual Conference of the IEEE
Conference_Location
Denver, CO
Print_ISBN
0-7803-7108-9
Type
conf
DOI
10.1109/IECON.2001.975578
Filename
975578
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