48.8 mW Multi-Cell InP HBT Amplifier with On-Wafer Power Combining at 220 GHz

Author

Reed, Thomas B. ; Rodwell, Mark J.W. ; Griffith, Zach ; Rowell, Petra ; Urteaga, Miguel ; Field, Mark ; Hacker, Jon

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA

fYear

2011

fDate

16-19 Oct. 2011

Firstpage

1

Lastpage

4

Abstract

We report 220 GHz Solid State Power Amplifier (SSPA) using a 250nm Indium Phosphide HBT technology. Amplifiers reported include designs having 2 and 4 power combined cells. The 4-cell amplifiers exhibited 10 dB small signal gain and 48.8 mW of output power with 4.5 dB gain at 220 GHz. These amplifiers have a 3-dB small signal bandwidth of greater than 48 GHz. A 5-μm thick BCB microstrip wiring environment with 4 levels of interconnects allowed for low-loss transmission lines, mm-wave tuning structures, and dense interconnects within each cell. The 2-cell amplifiers provide 10.9 dB small signal gain at 220 GHz with a 3-dB bandwidth of greater than 42 GHz and 26.3 mW of saturated output power at 208GHz.

Keywords

heterojunction bipolar transistors; indium compounds; millimetre wave power amplifiers; power combiners; BCB microstrip wiring environment; InP; dense interconnects; frequency 208 GHz; frequency 220 GHz; gain 10 dB; gain 10.9 dB; gain 4.5 dB; low-loss transmission lines; mm-wave tuning structures; multicell HBT amplifier; on-wafer power combining; power 26.3 mW; power 48.8 mW; size 250 nm; size 5 mum; solid state power amplifier; Frequency measurement; Gain; Heterojunction bipolar transistors; Indium phosphide; Power amplifiers; Power generation; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE

Conference_Location

Waikoloa, HI

ISSN

1550-8781

Print_ISBN

978-1-61284-711-5

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2011.6062480

Filename

6062480