Title :
A Decade Bandwidth 90 W GaN HEMT Push-Pull Power Amplifier for VHF / UHF Applications
Author :
Krishnamurthy, K. ; Martin, J. ; Aichele, D. ; Runton, D.
Author_Institution :
Defense & Power Bus. Unit, RFMD, Charlotte, NC, USA
Abstract :
A decade bandwidth 90 W, GaN HEMT push-pull power amplifier has been demonstrated. The power amplifier exhibits 18 dB small-signal gain with 20-1100 MHz 3-dB bandwidth and obtains 82.2-107.5 W CW output power with 51.9-73.8 % drain efficiency and 15.2-16.3 dB power gain over the 100-1000 MHz band. The push-pull power amplifier occupies a 2 × 2 inch PCB area and uses a novel compact broadband low loss coaxial coiled 1:1 balun to combine two 45 W packaged broadband lossy matched GaN HEMT amplifiers matched to 25 U. The packaged amplifiers contain a GaN on SiC HEMT operating at 50 V drain voltage with integrated passive matching circuitry on GaAs substrate. These amplifiers are targeted for use in multi-band multi-standard communication systems and for instrumentation applications.
Keywords :
III-V semiconductors; UHF amplifiers; VHF amplifiers; baluns; differential amplifiers; gallium compounds; high electron mobility transistors; GaN; GaN HEMT amplifier; PCB area; UHF application; VHF application; bandwidth 20 MHz to 1100 MHz; compact broadband; decade bandwidth; efficiency 51.9 percent to 73.8 percent; gain 15.2 dB to 16.3 dB; gain 18 dB; low loss coaxial coiled balun; multiband multistandard communication; passive matching circuitry; power 90 W; push-pull power amplifier; voltage 50 V; Broadband amplifiers; Gain; Gallium nitride; HEMTs; Impedance matching; Power amplifiers; Power generation;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-61284-711-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2011.6062484
