Title :
A 2-6 GHz GaAs Monolithic Up-Converter
Author :
McNamara, Dan ; Ali, Fazal ; Holden, Tom
Abstract :
This paper presents the design and performance of a 2-6 GHz GaAs monolithic upconverter with a high level of integration. The upconverter IC consists of a two stage push-pull LO amplifier, a two stage RF amplifier, a two stage IF amplifier and a transformer-coupled double balanced Schottky diode mixer and measures only 48X96 mils. It has a typical conversion gain of 10 dB and P1dB of 8.0 dBm. Results of twenty-four packaged units from three different wafer lots are presented.
Keywords :
Circuits; FETs; Frequency; Gallium arsenide; Inductors; MMICs; Power amplifiers; Radiofrequency amplifiers; Schottky diodes; Spirals;
Conference_Titel :
Microwave Conference, 1991. 21st European
Conference_Location :
Stuttgart, Germany
DOI :
10.1109/EUMA.1991.336351
