• DocumentCode
    2082912
  • Title

    An X-Band Low Phase Noise AlGaN-GaN-HEMT MMIC Push-Push Oscillator

  • Author

    Zirath, Herbert ; Szhau, Lai ; Kuylenstierna, Dan ; Felbinger, Jonathan ; Andersson, Kristoffer ; Rorsman, Niklas

  • Author_Institution
    Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Goteborg, Sweden
  • fYear
    2011
  • fDate
    16-19 Oct. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    An X-band low phase noise AlGaN-GaN HEMT MMIC push-push oscillator is designed, fabricated, and characterized. The oscillator is based on two common gate Colpitts oscillators. A minimum phase noise of -101 dBc at 100 kHz offset is achieved. The MMIC was fabricated in an ´in-house process´ at Chalmers University of Technology.
  • Keywords
    III-V semiconductors; MMIC oscillators; aluminium compounds; gallium compounds; high electron mobility transistors; microwave transistors; phase noise; wide band gap semiconductors; AlGaN-GaN; X-band low phase noise HEMT MMIC push-push oscillator; common gate Colpitts oscillators; in-house process; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MMICs; Phase noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE
  • Conference_Location
    Waikoloa, HI
  • ISSN
    1550-8781
  • Print_ISBN
    978-1-61284-711-5
  • Electronic_ISBN
    1550-8781
  • Type

    conf

  • DOI
    10.1109/CSICS.2011.6062492
  • Filename
    6062492
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2082912