• DocumentCode
    2083198
  • Title

    Microwave Noise Behaviour of Double Barrier Resonant Tunnelling Diodes

  • Author

    Heyker, H.C. ; Kwaspen, J.J.M. ; van de Roer, Th G

  • Volume
    1
  • fYear
    1991
  • fDate
    9-12 Sept. 1991
  • Firstpage
    585
  • Lastpage
    590
  • Abstract
    A method to measure the noise properties of double barrier resonant tunnelling (DBRT) diodes is described. The noise figure and noise measure of (nonoscillating) DBRT devices were measured over the full positive and negative bias voltage range, in the 1-1.6 GHz frequency band. Results show a clear bias dependence and almost frequency independence. The lowest noise measure observed on a 16 ¿m mesa DBRT diode biased in its active regions was 3, indicating that DBRT diodes are low noise devices.
  • Keywords
    Acoustical engineering; Circuit noise; Diodes; Frequency; Gallium arsenide; Microwave devices; Noise figure; Noise measurement; Resonant tunneling devices; Semiconductor device measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1991. 21st European
  • Conference_Location
    Stuttgart, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1991.336365
  • Filename
    4136349
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2083198