DocumentCode
2083220
Title
Single Event Upset Characterization of a Mixed-Signal Field Programmable Gate Array Using Proton Irradiation
Author
Hiemstra, David M. ; Gill, Prab
Author_Institution
MDA, Brampton, ON, Canada
fYear
2011
fDate
25-29 July 2011
Firstpage
1
Lastpage
4
Abstract
Proton induced SEU cross-sections of certain functional blocks of a mixed-signal flash field programmable gate array are presented. Upset rates in the space radiation environment are estimated.
Keywords
field programmable gate arrays; logic design; radiation hardening (electronics); flash FPGA; mixed-signal field programmable gate array; proton induced SEU cross-section; proton irradiation; single event upset characterization; space radiation environment; Flash memory; Light emitting diodes; Logic gates; Protons; Radiation effects; Random access memory; Single event upset;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop (REDW), 2011 IEEE
Conference_Location
Las Vegas, NV
ISSN
2154-0519
Print_ISBN
978-1-4577-1281-4
Type
conf
DOI
10.1109/REDW.2010.6062509
Filename
6062509
Link To Document