A fully integrated 2×2 power amplifier for dual band MIMO 802.11n WLAN application using SiGe HBT technology

Author

Liao, Hsin-Hsing ; Jiang, Hao ; Shanjani, Payman ; Behzad, Arya

Author_Institution

Broadcom Corp., San Diego, CA

fYear

2008

fDate

June 17 2008-April 17 2008

Firstpage

515

Lastpage

518

Abstract

A fully monolithic 2times2 (2 a-band, 2 g-band) power amplifier based upon SiGe HBT process is developed for the dual band MIMO 802.11n WLAN system. In order to achieve desirable performances for the 5 GHz band and high integration level, a special through-wafer-via (TWV) process on Si wafer was developed and utilized. In this work, both a-band and g-band PAs show above 17 dBm linear power output for -28 dB EVM and more than 18 dBm for -25 dB EVM with 14% efficiency for a-band and 19% efficiency for g-band. This fully integrated PA has a total die area of 1.36 mm times 3.68 mm and is packaged in a custom designed QFN4times6 32 pin package.

Keywords

Ge-Si alloys; MIMO communication; MMIC power amplifiers; OFDM modulation; bipolar MMIC; heterojunction bipolar transistors; wireless LAN; HBT technology; IEEE 802.11n WLAN application; SiGe; dual band MIMO; efficiency 14 percent; efficiency 19 percent; frequency 5 GHz; power amplifier; through-wafer-via process; CMOS technology; Dual band; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; MIMO; Power amplifiers; Silicon germanium; Wireless LAN; 802.11n; MIMO; OFDM; Power Amplifiers; SiGe; WLAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE

Conference_Location

Atlanta, GA

ISSN

1529-2517

Print_ISBN

978-1-4244-1808-4

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2008.4561489

Filename

4561489