A decade bandwidth, low voltage, medium power Class B push-pull Si/SiGe HBT power amplifier employing through-wafer vias

Author

Wooten, Tyson S. ; Larson, Lawrence E.

Author_Institution

Center for Wireless Commun., Univ. of California - San Diego, La Jolla, CA

fYear

2008

fDate

June 17 2008-April 17 2008

Firstpage

519

Lastpage

522

Abstract

We report a 0.5-5 GHz, 2 V class B push-pull power amplifier in a through-wafer via Si/SiGe HBT process. The amplifier utilized a small, low loss, broadband balun and a coupled spiral inductor transformer. Power added efficiencies greater than 40% from 1 GHz to 4 GHz and greater than 30% from 0.5 to 5 GHz have been achieved. Small signal gain of greater than 13 dB and maximum output power of 22 dBm were realized from 0.5 GHz to 4 GHz with a 2 V supply voltage.

Keywords

Ge-Si alloys; MMIC power amplifiers; UHF amplifiers; UHF integrated circuits; bipolar MMIC; heterojunction bipolar transistors; Si-SiGe; broadband baluns; coupled spiral inductor transformer; frequency 0.5 GHz to 5 GHz; medium power class B push-pull HBT power amplifier; power added efficiencies; voltage 2 V; Bandwidth; Broadband amplifiers; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Inductors; Low voltage; Power amplifiers; Silicon germanium; Spirals; Baluns; MMICs; broadband amplifiers; power amplifiers; silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE

Conference_Location

Atlanta, GA

ISSN

1529-2517

Print_ISBN

978-1-4244-1808-4

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2008.4561490

Filename

4561490