A X-band CMOS power amplifier with on-chip transmission line transformers

Author

Ku, Bon-Hyun ; Baek, Sang-Hyun ; Hong, Songcheol

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., KAIST, Daejeon

fYear

2008

fDate

June 17 2008-April 17 2008

Firstpage

523

Lastpage

526

Abstract

A X-band CMOS power amplifier (PA) has been fabricated using a 0.18-mum CMOS technology. On-chip transmission line transformers are used as matching elements for output, input, and inter-stage matching. The power amplifier provides the saturated output power of 23.5 dBm and 1-dB gain-compressed output power (P_1dB) is 21 dBm at 8.5 GHz with 3.3 V supply. The gain is 29 dB and power-added-efficiency (PAE) is 19 % at 8.5 GHz. Among the reported X/Ku band CMOS power amplifiers, this amplifier has the largest output power.

Keywords

CMOS analogue integrated circuits; MMIC power amplifiers; field effect MMIC; transformers; X-band CMOS power amplifier; efficiency 19 percent; frequency 8.5 GHz; inter-stage matching; on-chip transmission line transformers; size 0.18 mum; voltage 3.3 V; Broadband amplifiers; CMOS technology; Driver circuits; Frequency; Impedance matching; MOSFETs; Power amplifiers; Power generation; Power transmission lines; Transformers; CMOS power amplifiers; X-band; transmission line transformers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE

Conference_Location

Atlanta, GA

ISSN

1529-2517

Print_ISBN

978-1-4244-1808-4

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2008.4561491

Filename

4561491