Tailoring GaAs THz radiative properties with plasmons and surface phonon-polaritons

Author

Vassant, S. ; Marquier, F. ; Greffet, J.J. ; Pardo, F. ; Bouchon, P. ; Pelouard, J.L.

Author_Institution

Lab. Charles Fabry, Univ. Paris-Sud, Palaiseau, France

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

1

Abstract

Absorption of visible and infrared radiation by gratings due to the resonant excitation of surface waves is a well known phenomenon. In this paper, we study resonant absorption of terahertz (THz) radiation due to either excitation of surface phonon polaritons on GaAs or to mixed surface plasmon-phonon polaritons respectively on n-doped GaAs. Such surface waves exist around 8.5 THz (35 microns).

Keywords

III-V semiconductors; diffraction gratings; gallium arsenide; light absorption; polaritons; surface plasmons; GaAs; THz radiative properties; gratings; infrared radiation; mixed surface plasmon-phonon polaritons; resonant absorption; resonant excitation; surface phonon-polaritons; surface plasmons; surface waves; terahertz radiation; visible radiation; Absorption; Gallium arsenide; Gratings; Optical surface waves; Phonons; Reflectivity; Surface waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference

Conference_Location

Munich

ISSN

Pending

Print_ISBN

978-1-4577-0533-5

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/CLEOE.2011.5943624

Filename

5943624