• DocumentCode
    2083425
  • Title

    Different linearizing techniques to improve electromagnetic compatibility in SiGe LNA

  • Author

    Tirado-Mendez, J.A. ; Jardon-Aguilar, H. ; Iturbide-Sanchez, F.

  • Author_Institution
    Telecommun. Sect., Centre of Res. & Adv. Studies-IPN, Mexico
  • fYear
    2005
  • fDate
    21-24 June 2005
  • Firstpage
    160
  • Lastpage
    163
  • Abstract
    In this work three different structures are proposed to improve the linearity of SiGe amplifiers. The first structure, AFCE has the possibility of obtaining high linearity and wide bandwidth with low-level noise figure, without degrading the power gain. The second configuration called CERCC in a very high linearization is obtained but in a narrower band than the Active feedback configuration. The third structure is an alternative of the previous, but using only one resonant circuit in the collector and an inductor in the emitter.
  • Keywords
    Ge-Si alloys; electromagnetic compatibility; linearisation techniques; power amplifiers; AFCE configuration; CERCC; LNA; SiGe; active feedback common-emitter; electromagnetic compatibility; inductor; linearizing technique; low-level noise figure; resonant circuit; Bandwidth; Degradation; Electromagnetic compatibility; Feedback; Germanium silicon alloys; Inductors; Linearity; Noise figure; RLC circuits; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electromagnetic Compatibility and Electromagnetic Ecology, 2005. IEEE 6th International Symposium on
  • Print_ISBN
    0-7803-9374-0
  • Type

    conf

  • DOI
    10.1109/EMCECO.2005.1513090
  • Filename
    1513090