DocumentCode
2083425
Title
Different linearizing techniques to improve electromagnetic compatibility in SiGe LNA
Author
Tirado-Mendez, J.A. ; Jardon-Aguilar, H. ; Iturbide-Sanchez, F.
Author_Institution
Telecommun. Sect., Centre of Res. & Adv. Studies-IPN, Mexico
fYear
2005
fDate
21-24 June 2005
Firstpage
160
Lastpage
163
Abstract
In this work three different structures are proposed to improve the linearity of SiGe amplifiers. The first structure, AFCE has the possibility of obtaining high linearity and wide bandwidth with low-level noise figure, without degrading the power gain. The second configuration called CERCC in a very high linearization is obtained but in a narrower band than the Active feedback configuration. The third structure is an alternative of the previous, but using only one resonant circuit in the collector and an inductor in the emitter.
Keywords
Ge-Si alloys; electromagnetic compatibility; linearisation techniques; power amplifiers; AFCE configuration; CERCC; LNA; SiGe; active feedback common-emitter; electromagnetic compatibility; inductor; linearizing technique; low-level noise figure; resonant circuit; Bandwidth; Degradation; Electromagnetic compatibility; Feedback; Germanium silicon alloys; Inductors; Linearity; Noise figure; RLC circuits; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility and Electromagnetic Ecology, 2005. IEEE 6th International Symposium on
Print_ISBN
0-7803-9374-0
Type
conf
DOI
10.1109/EMCECO.2005.1513090
Filename
1513090
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