Title :
Proton-Induced Single Event Upsets in 90nm Technology High Performance SRAM Memories
Author :
Puchner, H., Sr. ; Tausch, J. ; Koga, R.
Author_Institution :
Aerosp. & Defense Div., Cypress Semicond., San Jose, CA, USA
Abstract :
Low energy Proton induced upsets in a Quad Data Rate 90nm technology radiation hard SRAM are analyzed and compared with published data for 65nm/90nm technologies. Only 100× increase in cross section is discovered compared to several orders of magnitude for others.
Keywords :
SRAM chips; radiation effects; high performance SRAM memories; low energy proton; proton-induced single event upsets; quad data rate; radiation; size 90 nm; Computer architecture; Microprocessors; Particle beams; Protons; Random access memory; Sensitivity; Silicon;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2011 IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4577-1281-4
DOI :
10.1109/REDW.2010.6062523
