• DocumentCode
    2083649
  • Title

    Recent Power MOSFET Test Results

  • Author

    Scheick, Leif Z. ; Gauthier, Michael ; Gauthier, Brian ; Triggs, Brian

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    2011
  • fDate
    25-29 July 2011
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    The results of recent Single Event Effect (SEE) testing of newly available power MOSFETS are presented.
  • Keywords
    power HEMT; radiation hardening; power MOSFET; radiation hardening; single event effect testing; Logic gates; Power MOSFET; Radiation effects; Testing; Voltage measurement; Xenon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2011 IEEE
  • Conference_Location
    Las Vegas, NV
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4577-1281-4
  • Type

    conf

  • DOI
    10.1109/REDW.2010.6062527
  • Filename
    6062527
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2083649