Title :
Impact of Reference Voltage on the ELDRS Characteristics of the LM4050 Shunt Voltage Reference
Author :
Kruckmeyer, Kirby ; Trinh, Thang ; McGee, Larry ; Kelly, Andrew T.
Author_Institution :
Nat. Semicond., Santa Clara, CA, USA
Abstract :
Two different reference voltage options (2.5V and 5.0V) of National Semiconductor´s LM4050WGxxRLQV shunt voltage reference were put through Total Ionizing Dose (TID) testing at High Dose Rate (HDR) and Low Dose Rate (LDR) with different biasing conditions during irradiation and showed different sensitivities to the different dose rates and bias conditions. Another product, DS16F95WxFQMLV, that uses the same wafer fabrication process had a different TID response.
Keywords :
radiation hardening (electronics); semiconductor device testing; DS16F95WxFQMLV; ELDRS characteristic; HDR; LM4050WGxxRLQV shunt voltage reference; TID testing; high dose rate; irradiation; low dose rate; total ionizing dose; voltage 2.5 V; voltage 5.0 V; Military standards; Pins; Radiation effects; Resistors; Sensitivity; Testing; Transceivers;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2011 IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4577-1281-4
DOI :
10.1109/REDW.2010.6062532
