Title :
Design and analysis of a high-performance cascode bipolar low noise amplifier with shunt feedback capacitor
Author :
Kang, Byoungjoong ; Yang, Sung-Gi ; Yu, Jinhyuck ; Choo, Wooseung ; Park, Byeong-Ha
Author_Institution :
SAMSUNG Electron. Co., Ltd., Yongin
fDate :
June 17 2008-April 17 2008
Abstract :
In this paper, a cascode bipolar low noise amplifier (LNA) employing a shunt feedback capacitor is presented, for which the linearity and the noise figure (NF) can be optimized by reducing the transistor size and degeneration inductance. We also show that the second-order interaction, which affects the third-order nonlinearity, becomes insensitive to low-frequency input termination as the DC current increases. Finally, the method of removing the low-frequency trap is presented. The fabricated LNA in 0.35-mum SiGe BiCMOS process showed NF of 0.9 dB with 16-dB power gain and IIP3 of +11 dBm with current consumption of 10 mA from 2.8-V power supply at 900 MHz. The demonstrated LNA satisfies stringent sensitivity and linearity requirement of code-division multiple-access (CDMA) applications quite well.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; capacitors; code division multiple access; feedback amplifiers; integrated circuit design; low noise amplifiers; network analysis; silicon compounds; BiCMOS process; CDMA; SiGe; cascode bipolar low noise amplifier; code-division multiple-access; current 10 mA; degeneration inductance; frequency 900 MHz; gain 16 dB; noise figure; shunt feedback capacitor; voltage 2.8 V; Capacitors; Feedback; Inductance; Linearity; Low-frequency noise; Low-noise amplifiers; Multiaccess communication; Noise figure; Noise measurement; Noise reduction; Bipolar; SiGe; linearity; low noise amplifier; noise figure; second-order interaction;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1808-4
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2008.4561512