Bimetallic heatsinks for temperature compensation of diode lasers: prospects for microfabrication

Author

Cohen, Daniel A. ; Coldren, Larry A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1997

fDate

18-21 May 1997

Firstpage

768

Lastpage

774

Abstract

We demonstrate that temperature-dependent strain may be used to stabilize the wavelength, threshold current, and differential efficiency, of a 1.55 μm multiquantum well diode laser mounted on a bimetallic heatsink. We have obtained nearly complete stabilization of the modal wavelength, and an equivalent threshold current characteristic temperature of 133 K, over the temperature range of 20-70°C. We describe the principles of temperature compensation using thermal stress, review our results, and discuss the problems that remain to be solved

Keywords

compensation; deformation; heat sinks; laser stability; laser transitions; quantum well lasers; semiconductor device packaging; thermal stresses; 1.55 micron; 20 to 70 C; MQW LD; bimetallic heatsinks; differential efficiency; diode lasers; microfabrication; multiquantum well LD; stabilization; temperature compensation; temperature-dependent strain; thermal stress; threshold current; wavelength; Diode lasers; Distributed feedback devices; Heat sinks; Laser feedback; Laser stability; Quantum well lasers; Temperature distribution; Temperature sensors; Threshold current; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 1997. Proceedings., 47th

Conference_Location

San Jose, CA

ISSN

0569-5503

Print_ISBN

0-7803-3857-X

Type

conf

DOI

10.1109/ECTC.1997.606257

Filename

606257