Accurate modelling of IC interconnect performance using the method of lines

The accurate electrical modelling of integrated circuit (IC) interconnects is important to enable simulation of microwave devices and circuits to be possible. At present the electrical properties, at high frequencies, of IC interconnects are not accurately obtainable by RF on wafer probing. A modified “method of lines” (MoL) electromagnetic field simulator has been devised to extract the required electrical parameters given the physical dimensions and properties of the substrate and conductors. The technique accurately accounts for substrate and conductor losses, multi-stripline structures, and allows the stacking, vertically, of conductors within the substrate