Title :
A 0.13 μm CMOS 90 dB variable gain pre-power amplifier using robust linear-in-dB attenuator
Author :
Araki, Yuta ; Hashimoto, Toru ; Otaka, Shoji
Author_Institution :
Toshiba Corp., Corp. R&D Center, Kawasaki
fDate :
June 17 2008-April 17 2008
Abstract :
A 0.13um CMOS pre-power amplifier with 90dB gain range is fabricated. The pre-power amplifier consists of 4 variable attenuators and 3 fixed gain amplifiers, where the proposed attenuator suppresses the attenuation variation due to Vth variation. The pre-power amplifier outputs +4dBm with 75mW and -80dBm with 65mW. The ACPR is -48dBc and the EVM is less than 1.0% at Pout = +4dBm. The attenuation variation of less than +/-5dB is achieved.
Keywords :
CMOS integrated circuits; attenuators; power amplifiers; CMOS pre-power amplifier; fixed gain amplifiers; gain 90 dB; linear-in-dB attenuator; power 65 mW; power 75 mW; size 0.13 mum; variable attenuators; Attenuation; Attenuators; CMOS process; Gain; Linearity; Power amplifiers; Power control; Radio frequency; Robustness; Voltage; CMOS; attenuator; power control; pre-power amplifier; process variation;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1808-4
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2008.4561527
