• DocumentCode
    2084586
  • Title

    A new Ni-W thin film metallization for solder interconnections and design method of metallization thickness

  • Author

    Harada, Masahide ; Satoh, Ryoohei ; Yamada, Osamu ; Yabushita, Akira ; Itoh, Mitsuko ; Netsu, Toshitada ; Terouchi, Toshiro

  • Author_Institution
    Production Eng. Res. Lab., Hitachi Ltd., Yokohama, Japan
  • fYear
    1997
  • fDate
    18-21 May 1997
  • Firstpage
    866
  • Lastpage
    874
  • Abstract
    The demand for reliable thin-film metallization that can be repaired repeatedly by soldering has been increasing because multichip module on ceramic (MCM-C) has become widely used in workstations as well as main frame computers. This kind of metallization is also suitable for use with Pb-free solder with a high Sn content whereas a conventional metallization is consumed quickly by Sn. A Ni-W sputtered metallization satisfying this requirement has been developed by the authors. The reaction between Ni-W and Sn during soldering creates a Sn-Ni-W alloy layer. The diffusion of Sn into Ni-W and the formation of Sn-Ni-W is slower than any other thin-film metallization for solder interconnections ever applied to electronic devices, and this makes multiple solder repairs on a substrate possible. Furthermore, Ni-W is adequate for LSI metallization. Additionally, the film thickness appropriate to given amount of solder can be determined by adding the term for solder height to the frequency factor Do. This is especially important in designing fine connections for electronic devices
  • Keywords
    ceramics; integrated circuit interconnections; large scale integration; metallisation; multichip modules; nickel alloys; soldering; sputtered coatings; tungsten alloys; LSI metallization; MCM-C; NiW; ceramic; fine connections; frequency factor; metallization thickness; multichip module; multiple solder repairs; solder height; solder interconnections; thin-film metallization; Ceramics; Metallization; Multichip modules; Soldering; Sputtering; Substrates; Thin film devices; Tin; Transistors; Workstations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 1997. Proceedings., 47th
  • Conference_Location
    San Jose, CA
  • ISSN
    0569-5503
  • Print_ISBN
    0-7803-3857-X
  • Type

    conf

  • DOI
    10.1109/ECTC.1997.606271
  • Filename
    606271