Title :
Characterization of Microwave Power FETs Based on Physical Models
Author :
Snowden, Christopher M. ; Pantoja, Renato R.
Author_Institution :
Microwave Solid State Group, Department of Electronic and Electrical Engineering, University of Leeds, Leeds, LS2 9JT, UK
Abstract :
A physical model is used to accurately quantify the dependence of microwave performance and breakdown voltage of power FETs on device geometry and doping profile. The characterisation of double-recessed power FETs using physical models is presented for the first time in this paper. The influence of trapping phenomena in semi-insulating substrates and surface states is accounted for. Simulated results show very good correlation with measured data.
Keywords :
Circuit simulation; Doping profiles; Equivalent circuits; Fabrication; Geometry; Microwave FETs; Microwave devices; Predictive models; Semiconductor process modeling; Solid modeling;
Conference_Titel :
Microwave Conference, 1991. 21st European
Conference_Location :
Stuttgart, Germany
DOI :
10.1109/EUMA.1991.336466
