Title :
Observation of FWM signal in strain-induced GaAs quantum dots
Author :
Ikezawa, M. ; Masumoto, Y. ; Hong-Wen Ren
Author_Institution :
Inst. of Phys., Tsukuba Univ.
Abstract :
FWM signal in strain-induced GaAs quantum dots was detected by using heterodyne method. The signal shows two-component decay and a clear oscillatory structure. Its period is different from the beat period in GaAs quantum well
Keywords :
III-V semiconductors; gallium arsenide; heterodyne detection; multiwave mixing; semiconductor quantum dots; FWM signal; GaAs quantum well; heterodyne method; oscillatory structure; strain-induced GaAs quantum dots; two-component decay; Four-wave mixing; Gallium arsenide; Luminescence; Nonlinear optics; Optical mixing; Optical modulation; Quantum dot lasers; Quantum dots; Quantum well lasers; US Department of Transportation;
Conference_Titel :
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-778-4
