DocumentCode :
2085130
Title :
Proton irradiation induced defects in oxygenated Si p-n junctions
Author :
Botila, T. ; Pintilie, I. ; Petre, D. ; Pintilie, L.
Author_Institution :
Nat. Inst. for Mater. Sci., Bucharest, Romania
Volume :
2
fYear :
1997
fDate :
7-11 Oct 1997
Firstpage :
319
Abstract :
The proton irradiation induced defects in oxygenated Si p-n junctions have been investigated using both optical charging spectroscopy (OCS) and thermally stimulated currents (TSC) methods in the temperature range 25-250 K. The measurements were performed for 3 fluences of proton irradiation: 1.07×1012 cm-2 , 1.084×1013 cm-2 and 1.19×10 14 cm-2
Keywords :
elemental semiconductors; oxidation; p-n junctions; proton effects; silicon; thermally stimulated currents; 25 to 250 K; Si-SiO; optical charging spectroscopy; oxygenated Si p-n junctions; proton irradiation induced defects; thermally stimulated currents; Current measurement; Heating; Materials science and technology; P-n junctions; Physics; Position sensitive particle detectors; Protons; Silicon; Stimulated emission; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
Type :
conf
DOI :
10.1109/SMICND.1997.651027
Filename :
651027
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2085130
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