DocumentCode
2085184
Title
Ultrafast intersubband relaxation in GaN/AlN multiple quantum wells
Author
Hamazaki, J. ; Kunugita, H. ; Ema, K. ; Matsui, S. ; Ishii, Y. ; Morita, T. ; Kikuchi, A. ; Kishino, K.
Author_Institution
Dept. of Phys., Sophia Univ., Tokyo
fYear
2004
fDate
21-21 May 2004
Firstpage
503
Lastpage
504
Abstract
We have observed intersubband transition dynamics in GaN/AlN. The relaxation dynamics consists of ultrafast and slower components. The origin of these dynamics is discussed
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high-speed optical techniques; relaxation; semiconductor quantum wells; GaN-AlN; GaN-AlN multiple quantum wells; intersubband transition dynamics; ultrafast intersubband relaxation; Absorption; Electrons; Gallium nitride; Laser excitation; Optical pulses; Optical pumping; Optical scattering; Pulse amplifiers; Temperature measurement; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-778-4
Type
conf
Filename
1366864
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