Title :
Extremely high temperature (220°C) continuous-wave operation of 1300-nm-range quantum-dot lasers
Author :
Kageyama, T. ; Nishi, K. ; Yamaguchi, M. ; Mochida, R. ; Maeda, Y. ; Takemasa, K. ; Tanaka, Y. ; Yamamoto, T. ; Sugawara, M. ; Arakawa, Y.
Author_Institution :
QD Laser, Inc., Kawasaki, Japan
Abstract :
High temperature (>;125°C) resistant semiconductor lasers are attractive as light sources in a variety of harsh environments. Long-wavelength lasers operating under higher temperature of more than 200°C combined with silica-based optical fibers can expand application fields of data transmission and optical sensing to severe environments like space or deep underground. Temperature dependence of the threshold current of a semiconductor laser can be drastically reduced by employing quantum-dot (QD) active layers. Recent progress in epitaxial growth technology of QDs enhances the laser characteristics. Here, we report extremely high temperature continuous-wave (CW) operation up to 220°C of QD lasers emitted at 1300 nm-range for the first time by enhancing gain and increasing the quantized-energy separation of the QD active layers. Thus, QD lasers are proved to be suitable light sources for high temperature resistant applications.
Keywords :
light sources; quantum dot lasers; data transmission; epitaxial growth technology; extremely high temperature continuous-wave operation; high temperature resistant semiconductor lasers; laser characteristics; light sources; long-wavelength lasers; optical sensing; quantized-energy separation; quantum-dot active layers; quantum-dot lasers; silica-based optical fibers; temperature 220 C; temperature dependence; threshold current; wavelength 1300 nm; Fiber lasers; Gain; Quantum dot lasers; Temperature; Temperature sensors; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
DOI :
10.1109/CLEOE.2011.5943701