On the improvement of the recovery characteristics of semiconductor diodes by electron irradiation

Author

Iliescu, Elena ; Niculescu, Anastase ; Banu, Viorel ; Nichita, Anca ; Sturzu, Nicoleta

Author_Institution

Electron Accel. Lab., Inst. for Atomic Phys., Bucharest, Romania

Volume

2

fYear

1997

fDate

7-11 Oct 1997

Firstpage

323

Abstract

The paper relates to the manufacture of fast semiconductor devices and, more particularly, to irradiation of semiconductor diodes to improve their electrical characteristics thereof The electron linear accelerator AL1N-10 was used to irradiate at room and high temperature silicon diodes type BA and BAX. The influence of 10 MeV electron irradiation upon the main electrical characteristics (reverse recovery time, forward voltage) has been examined for different dosages of 10 to 50 kGy

Keywords

electron beam effects; elemental semiconductors; semiconductor diodes; silicon; 10 MeV; 10 MeV electron irradiation; Si; electron irradiation; electron linear accelerator AL1N-10; forward voltage; recovery characteristics; reverse recovery time; semiconductor diodes; Electric variables; Electrons; Linear accelerators; Pulp manufacturing; Semiconductor device manufacture; Semiconductor devices; Semiconductor diodes; Silicon; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International

Conference_Location

Sinaia

Print_ISBN

0-7803-3804-9

Type

conf

DOI

10.1109/SMICND.1997.651029

Filename

651029